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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1336 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) *High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V *High Speed Switching APPLICATIONS *High power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i VALUE 150 V 100 V 8 V 6 A 10 A 2 W UNIT .cn mi e ICM Collector Current-Peak Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 35 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1336 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2A; L= 10mH 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 8 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 12.5mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 12.5mA B 2.5 V A ICBO Collector Cutoff Current VCB= 150V; IE= 0 100 hFE DC Current Gain IC= 5A; VCE= 4V fT Current-Gain--Bandwidth Product Switching times ton Turn-on Time tstg Storage Time tf Fall Time w w scs .i w IC= 0.5A; VCE= 10V; f= 1MHz .cn mi e 1500 20 MHz 0.7 s IC= 5A, IB1= -IB2= 12.5mA; VCC= 50V 4.0 s 1.5 s isc Websitewww.iscsemi.cn 2 |
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